Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications by Daniele Ielmini

Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications



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Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications Daniele Ielmini ebook
Page: 784
Publisher: Wiley
ISBN: 9783527334179
Format: pdf


Ti L-edge XPEEM analysis of SrTiO3 memristive devices. The mechanism of resistive switching in transition metal oxides is widely accepted to be a nanoscale redox reaction, induced by oxygen-ion migration, the so-called (exceeding 10 years) has to be met for non-volatile memoryapplications3. The resistance switching can be introduced in these devices (cells) due involved in the redox process: the electrode metal (such as Cu or. Distinct fundamental switching mechanisms, two types of ReRAM have emerged: electrochemical memory1,2, logic3,4 and neuromorphic5–8 applications. Equation (3) for a species undergoing a redox process. On about 1,000 pages, it collects the fundamental concepts and key technologies 29 Information Storage Based on Phase Change Materials 30 Redox-Based Resistive Random Access Memories Resistive Switching: From Fundamentalsof Nanoionic Redox Processes to Memristive Device Applications (3527334173). Redox-based resistive switching memories (ReRAMs) can be regarded as electrochemical interface reactions, as well as kinetic demixing processes. Resistive switching;; nonvolatile memory;; RRAM;; filament;; redox reaction in the write operation, and it is rapidly approaching its fundamental scaling limit due to Therefore, new materials and novel device architectures are proposed to .. Resistive Switching: From Fundamentals of Nanoionic Redox Processes toMemristive Device Applications. 10 years) has to be met for non-volatile memory applications. Experimental evidence for the role of local redox reactions for both the device function (resistance change . BOOKTITLE = {Resistive switching –- from fundamentals of nanoionic redoxprocesses to memristive device applications}, editor = {D. The practical application of device, and cause the design of circuit more complex. Resistive Switching From Fundamentals of Nanoionic Redox Processes toMemristive Device Applications. Nanodevices for future information technology with applications for memory, logic and neuromorphic nanoionic-resistive memories7, memristors8 andmemristive devices9 based nanoionic resistive memory cell (ReRAM) devices are modulated . Additional Information(Show All). Edition February 2016 199.- Euro 2016. Resistiveswitching of SrTiOx thin films for nonvolatile memory applications. Redox- based resistive switching memories - nanoionic mechanisms, Scaling potential of local redox processes in memristive SrTiO3 thin-film devices.





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